Glossary

Typical capacitance parameters of power devices are not always the same as the physical parameters of the device terminal capacitances (Cgd, Cgs, Cds as an example) as shown next. It requires some interpretation to convert them to the data sheet parameters. For example, Ciss is sum of Cgd and Cgs device terminal capacitances.

Power FET Capacitance

IGBT Capacitance

Terms

C_ce: Drain to emitter capacitance

C_ds: Drain to source capacitance

C_gc: Gate to collector capacitance

C_gd: Gate to drain capacitance

C_ge: Gate to emitter capacitance

C_gs: Gate to source capacitance

C_ies: IGBT Input capacitance measurement, uses the N1272A.

C_iss: FET Input capacitance measurement. C_iss is sum of C_gd and C_gs device terminal capacitances.

C_oes: IGBT Output capacitance, uses the N1272A.

C_oss: FET Output capacitance measurement, uses the N1272A.

C_res: IGBT Reverse transfer capacitance measurement, uses the N1272A.

C_rss: FET Reverse transfer capacitance, uses the N1272A.

I_c-V_ce: For an IGBT, measures Ic-Vce characteristics. SMU pulse is used for the Collector-Emitter voltage output.

I_c-V_ge: for an IGBT, measures Ic-Vge characteristics. SMU pulse is used for the Collector-Emitter voltage output.

I_c-V_ge for Expander: For an IGBT, measurement uses UHCU, HVMCU and UHVU while the voltage drop at the output resistance of expanders is compensated to make Vce constant.

I_c(off)-V_ce: For an IGBT, measures and plots Collector current vs. Collector-Emitter voltage in cutoff region and extracts Collector-Emitter cutoff current and breakdown voltage.

I_d-V_ds: For FET,

I_d-V_gs: For FET,

I_d-V_gs for Expander: For FET,

I_f-V_f: for IGBT and FET,

I_r-V_r: for IGBT and FET,

R_g: For FET, measures gate resistance (in Ohms), uses the N1272A.