IGBT: Diode Ir-Vr Test

Measures the reverse bias voltage vs. current characteristics of the body (free-wheeling) diode.

Used with:

  • B1506A: IGBT DUT

  • B1505A: IGBT DUT, IV test type
Set the test parameters based on the specifications in the device's data sheet:
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.

See also Setting IV and CV Test Parameters.

Test Schematic

Gate Parameters

IntegTime: Use the drop-down menu to select the integration time for one measurement point; either Short (default), Medium, or Long.

Gate: The SMU connected to Gate terminal, primary sweep voltage output. Select Gate SMU from the drop-down menu.

Vc@Ices (V): The Collector voltage to decide Collector-Emitter cutoff current Ices.

Ic@BVces (A): The Collector current to decide Collector-Emitter breakdown voltage BVces.

Vg (V): The Gate voltage.

Emitter: The GNDU:GND connected to Emitter terminal. This field cannot be changed.

Collector Parameters

Collector: The SMU connected to Collector terminal, secondary sweep voltage output. In general, use the Input HVSMU for this test.

VcStart (V): The Sweep start voltage for Collector terminal.

VcStop (V): The Sweep stop voltage for Collector terminal.

VcStep (V): The Sweep step voltage for Collector terminal.

IcLimit (A): The Collector current compliance.

IgMinRange (A): Use the drop-down menu to select the minimum range for the gate current measurement.