FET: Diode Ir-Vr Test

Measures the reverse bias voltage vs. current characteristics of the body (free-wheeling) diode.

Used with:

  • B1506A: FET DUT

  • B1505A: FET DUT, IV test type
Set the test parameters based on the specifications in the device's data sheet:
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.

See also Setting IV and CV Test Parameters.

Test Schematic

Gate Parameters

IntegTime: The integration time for one measurement point; either Short (default), Medium, or Long.

Gate: The SMU connected to Gate terminal, primary sweep voltage output. Select Gate SMU from the drop-down menu.

Vd@Idss (V): The Drain voltage to decide the cutoff current Idss.

Id@BVdss (A): The Drain current to decide the breakdown voltage BVdss.

Vg (V): The Gate voltage.

Source: The GNDU:GND connected to Source terminal. This field cannot be changed.

Drain Parameters

Drain: The SMU connected to Drain terminal, secondary sweep voltage output. In general, use the Input HVSMU for this test.

VdStart (V): The Sweep start voltage for Drain terminal.

VdStop (V): The Sweep stop voltage for Drain terminal.

VdStep (V): The Sweep step voltage for Drain terminal.

IdLimit (A): The Drain current compliance.

IgMinRange (A): The Minimum range for the gate current measurement.