FET: Gate Diode Forward and Gate Diode Reverse

Measures characteristics of gate current when source and drain are grounded. This is useful for GaN FETs with a diode structure between Gate and Source, and thus have large Gate-to-Source current flow.

Used with:

  • B1506A: FET DUT

  • B1505A: FET DUT, Gate Diode test type

 

- Use these measurements ONLY for Gate Injection Transistors (GIT).
- This test requires the Gate Diode PD1000A.xtd configuration file. See Install PD1000A Configuration Files for more information.
- The Gate Diode Reverse test is the same as the Gate Diode Forward test but uses negative voltages.

 

Set the test parameters based on the specifications in the device's data sheet:
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.

See also Setting IV and CV Test Parameters.

Test Schematic

Gate Parameters

Gate: Use the drop-down menu to choose the gate type:

  • Gate SMU - Specifies the Gate port of the N1265A (B1505A only).

  • MPSMU - Specifies medium power source/monitor unit.

VGSStart (V): The VGS sweep start voltage (V).

VGSStop(V): The VGS sweep stop voltage (V).

LinearNOS: The number of steps for LINEAR sweep scale (see the SweepOutput option).

IgLimit (A): The upper limit of gate current.

NPLC: GNDU connected to source terminal, constant voltage output.

HoldTime: Measurement sampling hold time.

Drain Parameters

Vd (V): Drain voltage.

IdLimit (A): The Drain current compliance. If the VdStart voltage is negative, set IdLimit negative also.