FET: Id-VgsTest

Measures Drain current vs. Gate voltage characteristics. SMU pulse is used for the Drain-Source voltage output.

Used with:

  • B1506A: IGBT DUT

  • B1505A: IGBT DUT, IV test type

 

- Available only if you choose the H21 Instrument option in the Hardware Configuration dialog.
- This test requires Id-Vgs PD1000A.xtdconfiguration file. See Install PD1000A Configuration Files for more information.

 

Set the test parameters based on the specifications in the device's data sheet:
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.

See also Setting IV and CV Test Parameters.

Test Schematic

Gate Parameters

Drain Parameters

Example

In this example, discrete power FET is used.

ID-VGS setup:

Follow the next steps to set up the Id-Vgs of FET by referring to the corresponding number in Figure 3-15.

  1. Select FET as the device type.
  2. Select the checkbox for Id-Vgs test.
  3. Set the drain source voltage to constant 5 V.
  4. Set Compliance: 1 mA to cover 250 mA.
  5. Set the gate voltage sweep:
    • VgStart = 1 V.
    • VgStart = 4.5 V to cover 2 - 4 V Vth range.
  6. Set 500A as the Drain compliance current. (This limits the current flowing into the device at the upper limit of the vertical scale.)

  7. Set 10 V as the voltage compliance. This value is used to stop the sweep at the edge of the horizontal axis.
  8. Set the drain Pulse Width to 100 μs.
  9. Click the Start button.