FET: Id-VgsTest
Measures Drain current vs. Gate voltage characteristics. SMU pulse is used for the Drain-Source voltage output.
Used with:
-
B1506A: IGBT DUT
- B1505A: IGBT DUT, IV test type
- This test requires Id-Vgs PD1000A.xtdconfiguration file. See Install PD1000A Configuration Files for more information.
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.
See also Setting IV and CV Test Parameters.
Test Schematic
Gate Parameters
Click here for detailed information about each item in the list.Gate: The SMU connected to Gate terminal, primary sweep voltage output. Select Gate SMU from the drop-down menu.
VgStart (V): The Sweep start voltage for Gate terminal.
VgStop (V): The Sweep stop voltage for Gate terminal.
VgStep (V): The Sweep step voltage for Gate terminal.
Source: The GNDU:GND connected to Source terminal. This field cannot be changed.
Gate Resistance: Gate Resistance: Specify the desired Gate Resistance for the device, either 0 (default), 10, 100, or 1000 W.You must set the same Gate Resistance value in two places: 1) in the parameters for this test; and 2) in the EasyEXPERT software for your B1505A or B1506A power analyzer. See Additional IV and CV Test Information.
Drain Parameters
Click here for detailed information about each item in the list.Drain: The SMU connected to Drain terminal, secondary sweep voltage output.
VdStart (V): The Sweep start voltage for Drain terminal.
VdStop (V): The Sweep stop voltage for Drain terminal.
VdPoint: The Number of drain voltage sweep steps.
IdLimit (A): The Drain current compliance.
PulsePeriodMode: The Pulse period mode, AUTO or MANUAL. (If you choose MANUAL, you must also set the ManualPulsePeriod parameter.)
ManualPulsePeriod (s): The Pulse period. Use this parameter only when you have selected PulsePeriodMode = MANUAL.
Example
In this example, discrete power FET is used.
ID-VGS setup:
Follow the next steps to set up the Id-Vgs of FET by referring to the corresponding number in Figure 3-15.
- Select FET as the device type.
- Select the checkbox for Id-Vgs test.
- Set the drain source voltage to constant 5 V.
- Set Compliance: 1 mA to cover 250 mA.
- Set the gate voltage sweep:
- VgStart = 1 V.
- VgStart = 4.5 V to cover 2 - 4 V Vth range.
-
Set 500A as the Drain compliance current. (This limits the current flowing into the device at the upper limit of the vertical scale.)
- Set 10 V as the voltage compliance. This value is used to stop the sweep at the edge of the horizontal axis.
- Set the drain Pulse Width to 100 μs.
- Click the Start button.